IRFI1310N【PDF 2/9 页】MOSFET N-CH 100V 24A TO220FP

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IRFI1310N

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Conditions

V (BR)DSS

? V (BR)DSS / ? T J

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

100

–––

–––

0.11

––– V V GS = 0V, I D = 250μA

––– V/°C Reference to 25°C, I D = 1mA ?

R DS(on)

Static Drain-to-Source On-Resistance

–––

–––

0.036

?

V GS = 10V, I D = 13A ?

––– R G = 3.6 ?

V GS(th)

g fs

I DSS

I GSS

Q g

Q gs

Q gd

t d(on)

t r

t d(off)

t f

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

2.0

14

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

11

56

45

40

4.0 V V DS = V GS , I D = 250μA

––– S V DS = 25V, I D = 22A ?

25 V DS = 100V, V GS = 0V

μA

250 V DS = 80V, V GS = 0V, T J = 150°C

100 V GS = 20V

nA

-100 V GS = -20V

120 I D = 22A

15 nC V DS = 80V

58 V GS = 10V, See Fig. 6 and 13 ??

––– V DD = 50V

––– I D = 22A

ns

––– R D = 2.9 ?, See Fig. 10 ??

L D

L S

Internal Drain Inductance

Internal Source Inductance

–––

–––

4.5

7.5

–––

–––

nH

Between lead,

6mm (0.25in.)

from package

and center of die contact

G

D

S

––– V DS = 25V

C iss

C oss

C rss

C

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Drain to Sink Capacitance

–––

–––

–––

–––

1900

450

230

12

––– V GS = 0V

pF

––– ? = 1.0MHz, See Fig. 5 ?

––– ? = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I S

I SM

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) ??

––– –––

––– –––

24

140

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

G

D

S

V SD

t rr

Q rr

t on

Notes:

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– 1.3 V T J = 25°C, I S = 13A, V GS = 0V ?

––– 180 270 ns T J = 25°C, I F = 22A

––– 1.2 1.8 μC di/dt = 100A/μs ??

Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )

? Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

? Starting T J = 25°C, L = 1.0mH

R G = 25 ? , I AS = 22A. (See Figure 12)

? I SD ≤ 22A, di/dt ≤ 180A/μs, V DD ≤ V (BR)DSS ,

T J ≤ 175°C

? Pulse width ≤ 300μs; duty cycle ≤ 2%.

? t=60s, ?=60Hz

? Uses IRF1310N data and test conditions

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